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FET Transistors

The field-effect transistor (FET) is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. FETs are unipolar transistors as they involve single-carrier-type operation. The concept of the FET predates the bipolar junction transistor (BJT), though it was not physically implemented until after BJTs due to the limitations of semiconductor materials and the relative ease of manufacturing BJTs compared to FETs at the time.

Transistor > Thyristors > FET Transistors > MOSFET

Part No.	DS	Manufacturer	D/C	Qty	Region	Action
IRF7343TRPBF		IR	-	7616	China	Request A Quote
IRF7343TRPBF		IR	201223+	2	China	Request A Quote
IRF7343TRPBF		IR	2017+	7134	Hong Kong	Request A Quote
IRF7343TRPBF		IR	-	2282	Hong Kong	Request A Quote
IRF7343TRPBF		IR	-	2269	China	Request A Quote
IRF7343TRPBF		IR	201223+	18	Poland	Request A Quote
IRF7343TRPBF		IR	-	10000	China	Request A Quote
IRF7343TRPBF		IR	201733+	114	China	Request A Quote
IRF7343TRPBF		IR	201223+	8	Hong Kong	Request A Quote
IRF7343TRPBF		IR	201216+	16	China	Request A Quote
IRF7343TRPBF		IR	2022+	130000	China	Request A Quote
IRF7343TRPBF		IR	-	17719	China	Request A Quote
IRF7343TRPBF		IR	201107+	901	China	Request A Quote
IRF7343TRPBF		IR	2011+	1900	Japan	Request A Quote
IRF7343TRPBF		IR	2022+	4000	China	Request A Quote
IRF7343TRPBF		IR	2022+	5000	China	Request A Quote
IRF7343TRPBF		IR	201142+	12413	China	Request A Quote
IRF7343TRPBF		IR	2011+	5208	China	Request A Quote
IRF7343TRPBF		IR	201720+	10000	China	Request A Quote
IRF7343TRPBF		IR	201223+	8	China	Request A Quote
IRF7343TRPBF		IR	2017+	3997	Singapore	Request A Quote
IRF7343TRPBF		IR	2022+	6800	China	Request A Quote
IRF7343TRPBF		IR	2022+	6255	China	Request A Quote
IRF7343TRPBF		IR	2010	350	Poland	Request A Quote
IRF7343TRPBF		IR	-	4000	Germany	Request A Quote

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