검색 결과: K4T51163QJBCF7 in DRAM Chip
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DRAM Chip

Dynamic random-access memory (DRAM) is a type of random-access memory that stores each bit of data in a separate capacitor within an integrated circuit. The capacitor can be either charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. Since even "nonconducting" transistors always leak a small amount, the capacitors will slowly discharge, and the information eventually fades unless the capacitor charge is refreshed periodically. Because of this refresh requirement, it is a dynamic memory as opposed to SRAM and other static memory. The main memory (the "RAM") in personal computers is dynamic RAM (DRAM). It is the RAM in desktops, laptops and workstation computers as well as some of the RAM of video game consoles. The advantage of DRAM is its structural simplicity: only one transistor and a capacitor are required per bit, compared to four or six transistors in SRAM. This allows DRAM to reach very high densities. Unlike flash memory, DRAM is volatile memory (vs. non-volatile memory), since it loses its data quickly when power is removed. The transistors and capacitors used are extremely small; billions can fit on a single memory chip.

Memory > RAM > DRAM Chip

부품 번호	DS	제조 업체	D/C	수량	지역	액션
K4T51163QJ-BCF7		Samsung	-	4616	China	견적 요청서
K4T51163QJ-BCF7		Samsung	2011+	523	China	견적 요청서
K4T51163QJ-BCF7		Samsung	201313	1017	U.S.A.	견적 요청서
K4T51163QJ-BCF7		Samsung	201248+	94	China	견적 요청서
K4T51163QJ-BCF7		Samsung	-	647	China	견적 요청서
K4T51163QJ-BCF7		Samsung	2022+	8580	Hong Kong	견적 요청서
K4T51163QJ-BCF7		Samsung	2014+	11	Poland	견적 요청서
K4T51163QJ-BCF7		Samsung	-	15528	China	견적 요청서
K4T51163QJ-BCF7		Samsung	2012+	102	U.S.A.	견적 요청서
K4T51163QJBCF7		Samsung	1992+	5	U.S.A.	견적 요청서
K4T51163QJ-BCF7		Samsung	-	5039	Hong Kong	견적 요청서
K4T51163QJ-BCF7		Samsung	-	36567	Japan	견적 요청서

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