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in Thyristors
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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
---|---|---|---|---|---|---|
ZXMN10B08E6TA | Diodes | 1952 | 844 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | - | 157491 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | 201145 | 2586 | Germany | Request A Quote | |
ZXMN10B08E6TA | Diodes | 2021+ | 4806 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | 2023+ | 66540 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | 2022+ | 30000 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | - | 322 | U.S.A. | Request A Quote |
Part No. Variations
- ZXMN0545G4TA
- ZXMN10A07F
- ZXMN10A07ZTA
- ZXMN10A07ZTAIC
- ZXMN10A08DN8TA
- ZXMN10A08E6
- ZXMN10A08E6TA
- ZXMN10A08E6TC
- ZXMN10A08G
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- ZXMN10A09
- ZXMN10A09KMOS
- ZXMN10A09KTC
- ZXMN10A11GTA
- ZXMN10A11KTC
- ZXMN10A25G
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- ZXMN10A25KTC
- ZXMN10B08E6AT
- ZXMN10B08E6T
- ZXMN10B08E6TA
- ZXMN15A27KTC
- ZXMN2088DE6TA
- ZXMN20B28KTC
- ZXMN2A01E6TA
- ZXMN2A01FTA
- ZXMN2A01FTAIC
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- ZXMN2A14FTA
- ZXMN2AMCTA
- ZXMN2B01F
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- ZXMN2B14FHTA
- ZXMN2F30FHQTA
- ZXMN2F30FHTA
- ZXMN2F30FHTAIC
- ZXMN301FTA
- ZXMN3804
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- ZXMN3A04KMOS
- ZXMN3A06D
- ZXMN3A06DN8
- ZXMN3A06DN8CT
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- ZXMN3A14F
- ZXMN3A14FTA
- ZXMN3A14FTAIC
- ZXMN3AM832
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- ZXMN406GCTA
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- ZXMN6A07FQTA
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- ZXMN6A08GTAMOS
- ZXMN6A09DN8TA
- ZXMN6A09GTA
- ZXMN6A09K
- ZXMN6A09KTC
- ZXMN6A11DN8TC
- ZXMN6A11G
- ZXMN6A11GMOS
- ZXMN6A11GTA
- ZXMN6A11Z
- ZXMN6A11ZTA
- ZXMN6A25DN8TA
- ZXMN6A25GTA
- ZXMN6A25KTC
- ZXMN6A25N8TA
- ZXMN7A11G
- ZXMN7A11GTA
- ZXMN7A11KTC