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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
型号 | DS | 厂牌 | 批号 | 数量 | 地区 | 采购 |
---|---|---|---|---|---|---|
SPA11N60C3 | Infineon | 202326+ | 6785 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | - | 1741 | 香港 | 要求报价 | |
SPA11N60C3 | Infineon | 201546+ | 500 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | - | 1200 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 2021+ | 10000 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 2021+ | 10000 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 2022+ | 2000 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 2022+ | 15860 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 2022+ | 7500 | 香港 | 要求报价 | |
SPA11N60C3 | Infineon | 1937+ | 14000 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | - | 5000 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 1923 | 381 | 日本 | 要求报价 | |
SPA11N60C3 | Infineon | 2021+ | 34530 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 2023+ | 11859 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 2021+ | 8800 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | - | 430 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 2001 | 20 | 法国 | 要求报价 | |
SPA11N60C3 | Infineon | - | 21487 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 2022+ | 18000 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 200849 | 200 | 波兰 | 要求报价 | |
SPA11N60C3 | Infineon | 2021+ | 141468 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 2022+ | 990000 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | - | 2000 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 2022+ | 13000 | 中国 | 要求报价 | |
SPA11N60C3 | Infineon | 200825+ | 67 | 中国 | 要求报价 |
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