Results for: AN7852
in Thyristors
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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
---|---|---|---|---|---|---|
SI7852DP-T1-E3 | Vishay | - | 103 | U.S.A. | Request A Quote | |
SI7852DP-T1-E3 | Vishay | 201309 | 14 | U.S.A. | Request A Quote | |
SI7852DP-T1-E3 | Vishay | 201325 | 3 | U.S.A. | Request A Quote | |
SI7852DP-T1-E3 | Vishay | 2021+ | 20000 | China | Request A Quote | |
SI7852DP-T1-E3 | Vishay | 2021 | 6000 | China | Request A Quote | |
SI7852DP-T1-E3 | Vishay | - | 14669 | China | Request A Quote | |
SI7852DP-T1-E3 | Vishay | - | 30000 | China | Request A Quote | |
SI7852DP-T1-E3 | Vishay | - | 5200 | China | Request A Quote | |
SI7852DP-T1-E3 | Vishay | - | 5 | U.S.A. | Request A Quote | |
SI7852DP-T1-E3 | Vishay | 2021+ | 24000 | China | Request A Quote | |
SI7852DP-T1-E3 | Vishay | 1916+ | 188 | China | Request A Quote | |
SI7852DP-T1-E3 | Vishay | 2010 | 8818 | Taiwan | Request A Quote | |
SI7852DP-T1-E3 | Vishay | 2021+ | 12000 | China | Request A Quote | |
SI7852DP-T1-E3 | Vishay | 2022+ | 30650 | China | Request A Quote | |
SI7852DP-T1-E3 | Vishay | 2021+ | 3000 | China | Request A Quote | |
SI7852DP-T1-E3 | Vishay | 2021+ | 3000 | China | Request A Quote | |
SI7852DP-T1-E3 | Vishay | - | 295000 | China | Request A Quote |
Part No. Variations
- AN7803
- AN7805
- AN7805F
- AN7806
- AN7808
- AN7809
- AN7809F
- AN7809FLB
- AN7809LB1X
- AN7810
- AN7812
- AN7815
- AN7815T
- AN7818
- AN7824
- AN7836D
- AN783D4
- AN783D6
- AN784D10
- AN78712
- AN78D05AL
- AN78D08AL
- AN78D09AL
- AN78D12AL
- AN78D15AL
- AN78L04
- AN78L04TA
- AN78L05
- AN78L05M
- AN78L05ME1
- AN78L05MSOT89
- AN78L07M
- AN78L08M
- AN78L08ME1
- AN78L08TA
- AN78L09
- AN78L09M
- AN78L10ME1
- AN78L12M
- AN78L12ME1
- AN78L15
- AN78L15M
- AN78L15ME1
- AN78L18
- AN78L18M
- AN78L20
- AN78L24
- AN78M05
- AN78M05F
- AN78M10
- AN78M12
- AN78M18
- AN78M24
- AN78N04
- AN78N05
- AN78N09