Results for: UZ10B
in Thyristors
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Thyristors
A thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act exclusively as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased (that is, while the voltage across the device is not reversed). A three-lead thyristor is designed to control the larger current of its two leads by combining that current with the smaller current or voltage of its other lead - known as its control lead. In contrast, a two-lead thyristor is designed to 'switch on' if the potential difference between its leads is sufficiently large - a value representing its breakdown voltage. Some sources define silicon-controlled rectifiers and thyristors as synonymous. Other sources define thyristors as a larger set of devices with at least four layers of alternating N and P-type material. The first thyristor devices were released commercially in 1956. Because thyristors can control a relatively large amount of power and voltage with a small device, they find wide application in control of electric power, ranging from light dimmers and electric motor speed control to high-voltage direct current power transmission. Thyristors may be used in power-switching circuits, relay-replacement circuits, inverter circuits, oscillator circuits, level-detector circuits, chopper circuits, light-dimming circuits, low-cost timer circuits, logic circuits, speed-control circuits, phase-control circuits, etc. Originally thyristors relied only on current reversal to turn them off, making them difficult to apply for direct current; newer device types can be turned on and off through the control gate signal. A thyristor is not a proportional device like a transistor. In other words, a thyristor can only be fully on or off, while a transistor can lie in between on and off states. This makes a thyristor unsuitable as an analog amplifier, but useful as a switch.
Transistor > Thyristors > FET Transistors > MOSFET
Part No. | DS | Manufacturer | D/C | Qty | Region | Action |
---|---|---|---|---|---|---|
ZXMN10B08E6TA | Diodes | 1952 | 844 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | - | 157491 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | 201145 | 2586 | Germany | Request A Quote | |
ZXMN10B08E6TA | Diodes | 2021+ | 4806 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | 2023+ | 66540 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | 2022+ | 30000 | China | Request A Quote | |
ZXMN10B08E6TA | Diodes | - | 322 | U.S.A. | Request A Quote |
Part No. Variations
- UZ1084
- UZ108415TQ2R
- UZ108418TQ2R
- UZ108425V
- UZ108433V
- UZ1084ADJ
- UZ1084G33TQ2R
- UZ1084G33VTO252R
- UZ1084GADTQ2R
- UZ1084L18
- UZ1084L25TQ2R
- UZ1084L25VTO263
- UZ1084L33
- UZ1084L33TQ2
- UZ1084L33TQ2R
- UZ1084L33TQ3R
- UZ1084L33V
- UZ1084L33VTO2633TR
- UZ1084L50
- UZ1084L50V
- UZ1084LADJ
- UZ1084LADJTO252
- UZ1084LADJTO2633
- UZ1084LADTA3T
- UZ1084LADTN3R
- UZ1084LADTQ2
- UZ1084LADTQ2R
- UZ1084LADTQ2T
- UZ1084LADTQ3R
- UZ1085GADJ
- UZ1085GADTN3R
- UZ1085L
- UZ1085L18V
- UZ1085L33TQ3R
- UZ1085L33V
- UZ1085L50
- UZ1085L50TN3AR
- UZ1085L50TQ2R
- UZ1085L50VTQ2R
- UZ1085L50VTQ3
- UZ1085LADJ
- UZ1085LADJIC
- UZ1085LADJTO252
- UZ1085LADJTO252TR
- UZ1085LADTN3R
- UZ1085LADTQ2R
- UZ1085LADTQ3R
- UZ108625
- UZ1086G33AA3R
- UZ1086GAA3R
- UZ1086GADJ
- UZ1086GADJSOT223TR
- UZ1086L18
- UZ1086L18TQ2R
- UZ1086L18V
- UZ1086L33
- UZ1086L33IC
- UZ1086L33TN3R
- UZ1086L33V
- UZ1086L5
- UZ1086L50
- UZ1086LAA3R
- UZ1086LADJ
- UZ1086LADTA3T
- UZ10BSCTAP